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Datasheet File OCR Text:

NAND01G-B2B NAND02G-B2C
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
High density NAND flash memories - Up to 2 Gbits of memory array - Cost effective solutions for mass storage applications NAND interface - x8 or x16 bus width - Multiplexed address/ data - Pinout compatibility for all densities Supply voltage: 1.8 V/3.0 V Page size - x8 device: (2048 + 64 spare) bytes - x16 device: (1024 + 32 spare) words Block size - x8 device: (128 K + 4 K spare) bytes - x16 device: (64 K + 2 K spare) words Page read/program - Random access: 25 s (max) - Sequential access: 30 ns (min) - Page program time: 200 s (typ) Copy back program mode Cache program and cache read modes Fast block erase: 2 ms (typ) Status register Electronic signature Chip enable `don't care'

TSOP48 12 x 20 mm
FBGA

VFBGA63 9.5 x 12 x 1 mm VFBGA63 9 x 11 x 1 mm
Serial number option Data protection - Hardware block locking - Hardware program/erase locked during power transitions Data integrity - 100 000 program/erase cycles per block (with ECC) - 10 years data retention ECOPACK(R) packages Development tools - Error correction code models - Bad blocks management and wear leveling algorithms - Hardware simulation models

Table 1.
Device summary
Reference NAND01G-B2B Part number NAND01GR3B2B, NAND01GW3B2B NAND01GR4B2B, NAND01GW4B2B(1) NAND02GR3B2C, NAND02GW3B2C NAND02G-B2C NAND02GR4B2C, NAND02GW4B2C(1)
1. x16 organization only available for MCP products.
April 2008
Rev 5
1/60
www.numonyx.com 1
Contents
NAND01G-B2B, NAND02G-B2C
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Bad blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Signals description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 Inputs/outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Inputs/outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.1 4.2 4.3 4.4 4.5 4.6 Command input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Address input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Write Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 6
Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1 Read memory array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1.1 6.1.2 Random read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Page read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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NAND01G-B2B, NAND02G-B2C
Contents
6.2 6.3
Cache read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Page program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.3.1 6.3.2 Sequential input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Random data input in a page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4 6.5 6.6 6.7 6.8
Copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Cache program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Block erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.8.1 6.8.2 6.8.3 6.8.4 6.8.5 6.8.6 Write protection bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 P/E/R controller and cache ready/busy bit (SR6) . . . . . . . . . . . . . . . . . 30 P/E/R controller bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Cache program error bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Error bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 SR4, SR3 and SR2 are reserved . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.9
Read electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7 8
Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.1 8.2 8.3 8.4 8.5 8.6 Bad block management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 NAND flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Error correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Hardware simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8.6.1 8.6.2 Behavioral simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 IBIS simulations models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9 10 11
Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 39 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
11.1 11.2 Ready/Busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . 52 Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
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Contents
NAND01G-B2B, NAND02G-B2C
12 13 14
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
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NAND01G-B2B, NAND02G-B2C
List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Valid blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Address insertion, x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Address insertion, x16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address definitions, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address definitions, x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Copy back program x8 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Copy back program x16 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Electronic signature byte 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Electronic signature byte/word 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 NAND flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Program, erase times and program erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . . 39 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 DC characteristics, 1.8 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 DC characteristics, 3 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 AC characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 AC characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data. . . . . 55 VFBGA63 9.5 x 12 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data. . . . . 56 VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data . 57 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
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List of figures
NAND01G-B2B, NAND02G-B2C
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 TSOP48 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 VFBGA63 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Random data output during sequential data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Cache read operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Page program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Random data input during sequential data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Page copy back program with random data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Cache program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Block erase operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Bad block management flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Equivalent testing circuit for AC characteristics measurement . . . . . . . . . . . . . . . . . . . . . . 42 Command latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Address latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Data Input Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Sequential data output after read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Read status register AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Read electronic signature AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Page read operation AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Page program AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Block erase AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Reset AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Program/erase enable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Program/erase disable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Ready/Busy AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Ready/Busy load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Resistor value versus waveform timings for Ready/Busy signal. . . . . . . . . . . . . . . . . . . . . 54 Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . . . . . 55 VFBGA63 9.5 x 12 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline . . . . . . . 56 VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline . . . . . . . . . 57
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NAND01G-B2B, NAND02G-B2C
Description
1
Description
NAND01G-B2B and NAND02G-B2C flash 2112-byte/1056-word page is a family of nonvolatile flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8 V or 3 V voltage supply. The size of a page is either 2112 bytes (2048 + 64 spare) or 1056 words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100 000 cycles (with ECC on). To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code (ECC). The devices feature a write protect pin that allows performing hardware protection against program and erase operations. The devices feature an open-drain ready/busy output that can be used to identify if the program/erase/read (P/E/R) controller is currently active. The use of an open-drain output allows the ready/busy pins from several memories to be connected to a single pull-up resistor. A Copy Back Program command is available to optimize the management of defective blocks. When a page program operation fails, the data can be programmed in another page without having to resend the data to be programmed. Each device has cache program and cache read features which improve the program and read throughputs for large files. During cache programming, the device loads the data in a cache register while the previous data is transferred to the page buffer and programmed into the memory array. During cache reading, the device loads the data in a cache register while the previous data is transferred to the I/O buffers to be read. All devices have the chip enable don't care feature, which allows code to be directly downloaded by a microcontroller, as chip enable transitions during the latency time do not stop the read operation. All devices have the option of a unique identifier (serial number), which allows each device to be uniquely identified. The unique identifier options is subject to an NDA (non disclosure agreement) and so not described in the datasheet. For more details of this option contact your nearest Numonyx sales office. The devices are available in the following packages:

TSOP48 (12 x 20 mm) VFBGA63 (9.5 x 12 x 1 mm, 0.8 mm pitch) for NAND02G-B2C devices VFBGA63 (9 x 11 x 1 mm, 0.8 mm pitch) for NAND01G-B2B devices.
For information on how to order these options refer to Table 29: Ordering information scheme. Devices are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to '1'. See Table 2: Product description, for all the devices available in the family.
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Description Table 2. Product description
NAND01G-B2B, NAND02G-B2C
Timings Reference Part number Density Bus width Page size Block size Memory array Operating Random Sequential voltage access access time time (max) (min) 1.7 to 1.95 V 64 pages x 1024 blocks 2.7 to 3.6 V 1.7 to 1.95 V 2.7 to 3.6 V 1.7 to 1.95 V 64 pages x 2048 blocks 2.7 to 3.6 V 1.7 to 1.95 V 2.7 to 3.6 V 25 s 25 s 25 s 25 s 50 ns 30 ns 2 ms 50 ns 30 ns 200 s NAND02GR3B2C x8 NAND02G -B2C NAND02GW3B2C 2Gbits NAND02GR4B2C x16 NAND02GW4B2C 1024 64K+ +32 2K words words 2048 +64 bytes 128K +4K bytes 25 s 50 ns
(1)
Page Progra m time (typ)
Bloc k erase (typ)
Package
NAND01GR3B2B x8 NAND01GW3B2B NAND01G -B2B NAND01GR4B2B x16 NAND01GW4B2B 1Gbit
2048 +64 bytes
128K +4K bytes
VFBGA63 9 x 11 mm TSOP48
1024 64K+ +32 2K words words
(1)
VFBGA63 9.5 x 12 m m TSOP48 2 ms
(1)
25 s 25 s 25 s
30 ns 50 ns 30 ns
(1)
1. x16 organization only available for MCP.
Figure 1.
Logic block diagram
Address register/counter
X decoder
AL CL W E WP R
Command interface logic
P/E/R controller, high voltage generator
NAND flash memory array
Page buffer Command register Cache register Y decoder
I/O buffers & latches
RB I/O0-I/O7, x8/x16 I/O8-I/O15, x16
AI12799
8/60
NAND01G-B2B, NAND02G-B2C Figure 2. Logic diagram
Description
VDD
E R W AL CL WP NAND01G-B2B NAND02G-B2C
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
RB
VSS
AI13101
1. x16 organization only available for MCP.
Table 3.
Signal names
Signal I/O8-15 I/O0-7 AL CL E R RB W WP VDD VSS NC DU Function Data input/outputs for x16 devices Data input/outputs, address inputs, or command inputs for x8 and x16 devices Address Latch Enable Command Latch Enable Chip Enable Read Enable Ready/Busy (open-drain output) Write Enable Write Protect Supply voltage Ground Not connected internally Do not use Direction I/O I/O Input Input Input Input Output Input Input Supply Supply - -
9/60
Description Figure 3. TSOP48 connections
NAND01G-B2B, NAND02G-B2C
NC NC NC NC NC NC RB R E NC NC VDD VSS NC NC CL AL W WP NC NC NC NC NC
1
48
12 NAND01GW3B2B 37 13 NAND02GW3B2C 36
NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC VDD VSS NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC
24
25
AI13102
1. Available only for NAND01GW3B2B and NAND02GW3B2C 8-bit devices.
10/60
NAND01G-B2B, NAND02G-B2C Figure 4. VFBGA63 connections (top view through package)
Description
1
2
3
4
5
6
7
8
9
10
A
DU
DU
DU
DU
B
DU
DU
DU
C
WP
AL
VSS
E
W
RB
D
NC
R
CL
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
NC
NC
G
NC
NC
NC
NC
NC
NC
H
NC
I/O0
NC
NC
NC
VDD
J
NC
I/O1
NC
VDD
I/O5
I/O7
K
VSS
I/O2
I/O3
I/O4
I/O6
VSS
L
DU
DU
DU
DU
M
DU
DU
DU
DU
AI13103
1. Available only for NAND01GR3B2B and NAND02GR3B2C 8-bit devices.
11/60
Memory array organization
NAND01G-B2B, NAND02G-B2C
2
Memory array organization
The memory array is made up of NAND structures where 32 cells are connected in series. The memory array is organized in blocks where each block contains 64 pages. The array is split into two areas, the main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used to store error correction codes, software flags or bad block identification. In x8 devices the pages are split into a 2048-byte main area and a spare area of 64 bytes. In the x16 devices the pages are split into a 1,024-word main area and a 32-word spare area. Refer to Figure 5: Memory array organization.
2.1
Bad blocks
The NAND flash 2112-byte/1056-word page devices may contain bad blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional bad blocks may develop during the lifetime of the device. The bad block Information is written prior to shipping (refer to Section 8.1: Bad block management for more details). Table 4: Valid blocks shows the minimum number of valid blocks in each device. The values shown include both the bad blocks that are present when the device is shipped and the bad blocks that could develop later on. These blocks need to be managed using bad blocks management, block replacement or error correction codes (refer to Section 8: Software algorithms). Table 4. Valid blocks
Density of device 2 Gbits 1 Gbit Min 2008 1004 Max 2048 1024
12/60
NAND01G-B2B, NAND02G-B2C Figure 5. Memory array organization
x8 DEVICES
Block = 64 pages Page = 2112 bytes (2,048 + 64)
Memory array organization
x16 DEVICES
Block = 64 pages Page = 1056 words (1024 + 32)
a Sp
re
are
a a Sp re
are
a
Main area Block Page
Main area
Block Page 8 bits 2048 bytes 64 bytes 1024 words 32 words 16 bits
Page buffer, 2112 bytes 2,048 bytes
64 bytes
Page buffer, 1056 words 8 bits 1,024 words 32 words 16 bits
AI09854
13/60
Signals description
NAND01G-B2B, NAND02G-B2C
3
Signals description
See Figure 2: Logic diagram, and Table 3: Signal names, for a brief overview of the signals connected to this device.
3.1
Inputs/outputs (I/O0-I/O7)
Input/outputs 0 to 7 are used to input the selected address, output the data during a read operation or input a command or data during a write operation. The inputs are latched on the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or the outputs are disabled.
3.2
Inputs/outputs (I/O8-I/O15)
Input/outputs 8 to 15 are only available in x16 devices. They are used to output the data during a read operation or input data during a write operation. Command and address Inputs only require I/O0 to I/O7. The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when the device is deselected or the outputs are disabled.
3.3
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the address inputs in the command interface. When AL is High, the inputs are latched on the rising edge of Write Enable.
3.4
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the command inputs in the command interface. When CL is High, the inputs are latched on the rising edge of Write Enable.
3.5
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is Low, VIL, the device is selected. If Chip Enable goes High, vIH, while the device is busy, the device remains selected and does not go into standby mode.
3.6
Read Enable (R)
The Read Enable pin, R, controls the sequential data output during read operations. Data is valid tRLQV after the falling edge of R. The falling edge of R also increments the internal column address counter by one.
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NAND01G-B2B, NAND02G-B2C
Signals description
3.7
Write Enable (W)
The Write Enable input, W, controls writing to the command interface, input address and data latches. Both addresses and data are latched on the rising edge of Write Enable. During power-up and power-down a recovery time of 10 s (min) is required before the command interface is ready to accept a command. It is recommended to keep Write Enable High during the recovery time.
3.8
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program or erase operations. When Write Protect is Low, VIL, the device does not accept any program or erase operations. It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the operation completes Ready/Busy goes High, VOH. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Refer to the Section 11.1: Ready/Busy signal electrical characteristics for details on how to calculate the value of the pull-up resistor. During power-up and power-down a minimum recovery time of 10 s is required before the command interface is ready to accept a command. During this period the RB signal is Low, VOL.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (read, program and erase). An internal voltage detector disables all functions whenever VDD is below VLKO (see Table 22 and Table 23) to protect the device from any involuntary program/erase during power-transitions. Each device in a system should have VDD decoupled with a 0.1 F capacitor. The PCB track widths should be sufficient to carry the required program and erase currents.
3.11
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system ground.
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Bus operations
NAND01G-B2B, NAND02G-B2C
4
Bus operations
There are six standard bus operations that control the memory. Each of these is described in this section, see Table 5: Bus operations, for a summary. Typically, glitches of less than 5 ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not affect bus operations.
4.1
Command input
Command input bus operations are used to give commands to the memory. Commands are accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input commands. See Figure 19 and Table 24 for details of the timings requirements.
4.2
Address input
Address input bus operations are used to input the memory addresses. Four bus cycles are required to input the addresses for 1-Gbit devices whereas five bus cycles are required for the 2-Gbit device (refer to Table 6 and Table 7, Address insertion). The addresses are accepted when Chip Enable is Low, Address Latch Enable is High, Command Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses. See Figure 20 and Table 24 for details of the timings requirements.
4.3
Data input
Data input bus operations are used to input the data to be programmed. Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the Write Enable signal. The data is input sequentially using the Write Enable signal. See Figure 21 and Table 24 and Table 25 for details of the timings requirements.
4.4
Data output
Data output bus operations are used to read: the data in the memory array, the status register, the lock status, the electronic signature and the unique identifier. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal. See Figure 22 and Table 25 for details of the timings requirements.
16/60
NAND01G-B2B, NAND02G-B2C
Bus operations
4.5
Write Protect
Write Protect bus operations are used to protect the memory against program or erase operations. When the Write Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up.
4.6
Standby
When Chip Enable is High the memory enters standby mode, the device is deselected, outputs are disabled and power consumption is reduced. Table 5. Bus operations
E VIL VIL VIL VIL X VIH AL VIL VIH VIL VIL X X CL VIH VIL VIL VIL X X R VIH VIH VIH Falling X X W Rising Rising Rising VIH X X WP X(2) X VIH X VIL VIL/VD
D
Bus operation Command input Address input Data input Data output Write Protect Standby
I/O0 - I/O7 Command Address Data input Data output X X
I/O8 - I/O15(1) X X Data input Data output X X
1. Only for x16 devices. 2. WP must be VIH when issuing a program or erase command.
Table 6.
Bus cycle(1) 1st 2nd 3rd 4th 5
th(2)
Address insertion, x8 devices
I/O7 A7 VIL A19 A27 VIL I/O6 A6 VIL A18 A26 VIL I/O5 A5 VIL A17 A25 VIL I/O4 A4 VIL A16 A24 VIL I/O3 A3 A11 A15 A23 VIL I/O2 A2 A10 A14 A22 VIL I/O1 A1 A9 A13 A21 VIL I/O0 A0 A8 A12 A20 A28
1. Any additional address input cycles will be ignored. 2. The fifth cycle is valid for 2-Gbit devices. A28 is for 2-Gbit devices only.
17/60
Bus operations Table 7.
Bus cycle(1) 1st 2nd 3
rd th
NAND01G-B2B, NAND02G-B2C Address insertion, x16 devices
I/O8I/O15 X X X X X I/O7 A7 VIL A18 A26 VIL I/O6 A6 VIL A17 A25 VIL I/O5 A5 VIL A16 A24 VIL I/O4 A4 VIL A15 A23 VIL I/O3 A3 VIL A14 A22 VIL I/O2 A2 A10 A13 A21 VIL I/O1 A1 A9 A12 A20 VIL I/O0 A0 A8 A11 A19 A27
4 5
th(2)
1. Any additional address input cycles will be ignored. 2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Address definitions, x8
Address A0 - A11 A12 - A17 A18 - A27 A18 - A28 Block address Block address Definition Column address Page address 1-Gbit device 2-Gbit device
Table 9.
Address definitions, x16
Address A0 - A10 A11 - A16 A17 - A26 A17 - A27 Block address Block address Definition Column address Page address 1-Gbit device 2-Gbit device
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NAND01G-B2B, NAND02G-B2C
Command set
5
Command set
All bus write operations to the device are interpreted by the command interface. The commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when the Command Latch Enable signal is High. Device operations are selected by writing specific commands to the command register. The two-step command sequences for program and erase operations are imposed to maximize data security. The commands are summarized in Table 10: Commands. Table 10. Commands
Bus write operations(1) Command 1st cycle 00h 05h 00h 34h 80h 85h 00h 80h 60h FFh 90h 70h 2nd cycle 30h E0h 31h - 10h - 35h 15h D0h - - - 3rd cycle - - - - - - 85h - - - - - 4th cycle - - - - - - 10h - - - - - Yes Yes Yes(2) Commands accepted during busy
Read Random Data Output Cache Read Exit Cache Read Page Program (Sequential Input default) Random Data Input Copy Back Program Cache Program Block Erase Reset Read Electronic Signature Read Status Register
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown. 2. Only during Cache Read busy.
19/60
Device operations
NAND01G-B2B, NAND02G-B2C
6
Device operations
The following section gives the details of the device operations.
6.1
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the Read command must be issued, see Table 10: Commands. Once a Read command is issued two types of operations are available: random read and page read.
6.1.1
Random read
Each time the Read command is issued the first read is random read.
6.1.2
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred to the page buffer in a time of tWHBH (refer to Table 25 for value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially (from selected column address to last column address) by pulsing the Read Enable signal. The device can output random data in a page, instead of the consecutive sequential data, by issuing a Random Data Output command. The Random Data Output command can be used to skip some data during a sequential data output. The sequential operation can be resumed by changing the column address of the next data to be output, to the address which follows the Random Data Output command. The Random Data Output command can be issued as many times as required within a page. The Random Data Output command is not accepted during cache read operations.
20/60
NAND01G-B2B, NAND02G-B2C Figure 6. Read operations
Device operations
CL
E
W
AL
R tBLBH1 RB
I/O
00h
Command code
Address input
30h
Command code
Data output (sequentially)
Busy ai08657b
1. Highest address depends on device density.
21/60
Device operations Figure 7. Random data output during sequential data output
NAND01G-B2B, NAND02G-B2C
tBLBH1
(Read Busy time)
RB Busy
R
I/O
00h Cmd code
Address inputs
30h Cmd code
Data output
05h Cmd code
Address inputs
E0h Cmd code
Data output
5 Add cycles Row Add 1,2,3 Col Add 1,2 Spare area
2Add cycles Col Add 1,2 Spare area
Main area
Main area
ai08658
22/60
NAND01G-B2B, NAND02G-B2C
Device operations
6.2
Cache read
The cache read operation is used to improve the read throughput by reading data using the cache register. As soon as the user starts to read one page, the device automatically loads the next page into the cache register. A cache read operation consists of three steps (see Table 10: Commands): 1. 2. 3. One bus cycle is required to setup the Cache Read command (the same as the standard Read command) Four or five (refer to Table 6 and Table 7) bus cycles are then required to input the start address One bus cycle is required to issue the Cache Read Confirm command to start the P/E/R controller.
The start address must be at the beginning of a page (column address = 00h, see Table 8 and Table 9). This allows the data to be output uninterrupted after the latency time (tBLBH1), see Figure 8. The Ready/Busy signal can be used to monitor the start of the operation. During the latency period the Ready/Busy signal goes Low, after this the Ready/Busy signal goes High, even if the device is internally downloading page n+1. Once the cache read operation has started, the status register can be read using the Read Status Register command. During the operation, SR5 can be read, to find out whether the internal reading is ongoing (SR5 = `0'), or has completed (SR5 = `1'), while SR6 indicates whether the cache register is ready to download new data. To exit the cache read operation an Exit Cache Read command must be issued (see Table 10). If the Exit Cache Read command is issued while the device is internally reading page n+1, pages n and n+1 will not be output. Figure 8. Cache read operation
(Read Busy time)
tBLBH1
tBLBH4
RB
R Busy I/O
00h
Address inputs
31h
1st page
2nd page
3rd page
last page
34h
Read Setup code
Cache Read Confirm code
Block N Data output
Exit Cache Read code
ai13104b
23/60
Device operations
NAND01G-B2B, NAND02G-B2C
6.3
Page program
The page program operation is the standard operation to program data to the memory array. Generally, the page is programmed sequentially, however the device does support random input within a page. It is recommended to address pages sequentially within a given block. The memory array is programmed by page, however partial page programming is allowed where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed. The maximum number of consecutive partial page program operations allowed in the same page is four. After exceeding this a Block Erase command must be issued before any further program operations can take place in that page.
6.3.1
Sequential input
To input data sequentially the addresses must be sequential and remain in one block. For sequential input each page program operation consists of five steps (see Figure 9): 1. 2. 3. 4. 5. one bus cycle is required to setup the Page Program (sequential input) command (see Table 10) four or five bus cycles are then required to input the program address (refer to Table 6 and Table 7) the data is then loaded into the data registers one bus cycle is required to issue the Page Program Confirm command to start the P/E/R controller. The P/E/R will only start if the data has been loaded in step 3 the P/E/R controller then programs the data into the array.
6.3.2
Random data input in a page
During a sequential input operation, the next sequential address to be programmed can be replaced by a random address, by issuing a Random Data Input command. The following two steps are required to issue the command: 1. 2. one bus cycle is required to setup the Random Data Input command (see Table 10) two bus cycles are then required to input the new column address (refer to Table 6).
Random Data Input can be repeated as often as required in any given page. Once the program operation has started the status register can be read using the Read Status Register command. During program operations the status register will only flag errors for bits set to '1' that have not been successfully programmed to '0'. During the program operation, only the Read Status Register and Reset commands will be accepted, all other commands will be ignored. Once the program operation has completed the P/E/R controller bit SR6 is set to `1' and the Ready/Busy signal goes High. The device remains in read status register mode until another valid command is written to the command interface.
24/60
NAND01G-B2B, NAND02G-B2C Figure 9. Page program operation
tBLBH2
Device operations
(Program Busy time)
RB Busy I/O 80h Page Program Setup Code Address Inputs Data Input 10h Confirm Code 70h SR0
Read Status Register
ai08659
Figure 10. Random data input during sequential data input
(Program Busy time)
tBLBH2
RB Busy I/O 80h Cmd Code Address Inputs Data Intput 85h Cmd Code Address Inputs 2 Add cycles Col Add 1,2 Data Input 10h Confirm Code 70h SR0
Read Status Register
5 Add cycles Row Add 1,2,3 Col Add 1,2
Main area
Spare area
Main area
Spare area
ai08664
25/60
Device operations
NAND01G-B2B, NAND02G-B2C
6.4
Copy back program
The copy back program operation is used to copy the data stored in one page and reprogram it in another page. The copy back program operation does not require external memory and so the operation is faster and more efficient because the reading and loading cycles are not required. The operation is particularly useful when a portion of a block is updated and the rest of the block needs to be copied to the newly assigned block. If the copy back program operation fails an error is signalled in the status register. However as the standard external ECC cannot be used with the copy back program operation bit error due to charge loss cannot be detected. For this reason it is recommended to limit the number of copy back program operations on the same data and or to improve the performance of the ECC. The copy back program operation requires four steps: 1. The first step reads the source page. The operation copies all 1056 words/ 2112 bytes from the page into the data buffer. It requires: - - - 2. one bus write cycle to setup the command 4 or 5 bus write cycles to input the source page address (see Table 6 and Table 7) one bus write cycle to issue the confirm command code
When the device returns to the ready state (Ready/Busy High), the next bus write cycle of the command is given with the 4 or 5 bus cycles to input the target page address (see Table 6 and Table 7). Refer to Table 11 for the addresses that must be the same for the source and target pages Then the confirm command is issued to start the P/E/R controller.
3.
To see the data input cycle for modifying the source page and an example of the copy back program operation refer to Figure 11. A data input cycle to modify a portion or a multiple distant portion of the source page, is shown in Figure 12. Table 11. Copy back program x8 addresses
Density 1 Gbit 2 Gbits Same address for source and target pages no constraint A28
Table 12.
Copy back program x16 addresses
Density Same address for source and target pages no constraint A27
1 Gbit 2 Gbits
26/60
NAND01G-B2B, NAND02G-B2C Figure 11. Copy back program
Device operations
I/O
00h Read Code
Source Add Inputs
35h
85h Copy Back Code
Target Add Inputs
10h
70h
SR0
Read Status Register tBLBH2
(Program Busy time)
tBLBH1
(Read Busy time)
RB Busy Busy
ai09858b
Figure 12. Page copy back program with random data input
I/O
00h Read Code
Source Add Inputs 35h
85h Copy Back Code
Target Add Inputs
Data
85h
2 Cycle Add Inputs
Data
10h
70h
SR0
Unlimited number of repetitions
tBLBH1
(Read Busy time)
tBLBH2
(Program Busy time)
RB Busy Busy
ai11001
27/60
Device operations
NAND01G-B2B, NAND02G-B2C
6.5
Cache program
The cache program operation is used to improve the programming throughput by programming data using the cache register. The cache program operation can only be used within one block. The cache register allows new data to be input while the previous data that was transferred to the page buffer is programmed into the memory array. The following sequence is required to issue a cache program operation (refer to Figure 13): 1. First of all the program setup command is issued: one bus cycle to issue the program setup command then 4 or 5 bus write cycles to input the address (see Table 6 and Table 7). The data is then input (up to 2112 bytes/1056 words) and loaded into the cache register One bus cycle is required to issue the confirm command to start the P/E/R controller The P/E/R controller then transfers the data to the page buffer. During this the device is busy for a time of tBLBH5 Once the data is loaded into the page buffer the P/E/R controller programs the data into the memory array. As soon as the cache registers are empty (after tBLBH5) a new Cache Program command can be issued, while the internal programming is still executing.
2. 3. 4.
Once the program operation has started the status register can be read using the Read Status Register command. During cache program operations SR5 can be read to find out whether the internal programming is ongoing (SR5 = `0') or has completed (SR5 = `1') while SR6 indicates whether the cache register is ready to accept new data. If any errors have been detected on the previous page (Page N-1), the cache program error bit SR1 will be set to `1', while if the error has been detected on page N the error bit SR0 will be set to '1'. When the next page (Page N) of data is input with the Cache Program command, tBLBH5 is affected by the pending internal programming. The data will only be transferred from the cache register to the page buffer when the pending program cycle is finished and the page buffer is available. If the system monitors the progress of the operation using only the Ready/Busy signal, the last page of data must be programmed with the Page Program Confirm command (10h). If the Cache Program Confirm command (15h) is used instead, status register bit SR5 must be polled to find out if the last programming is finished before starting any other operations. Figure 13. Cache program operation
tBLBH5 tBLBH5 tCACHEPG
(Cache Busy time)
RB Busy I/O
80h
Busy
80h
Busy
80h
Address Inputs
Data Inputs
15h
Address Inputs
Data Inputs
15h
Address Inputs
Data Inputs
10h
70h SR0
Page Program Code First Page
Cache Program Code
Page Program Code
Cache Program Confirm Code Second Page Last Page
Read Status Page Register Program Confirm Code
(can be repeated up to 63 times) ai08672
1. Up to 64 pages can be programmed in one cache program operation. 2. tCACHEPG is the program time for the last page + the program time for the (last - 1)th page - (Program command cycle time + Last page data loading time).
28/60
NAND01G-B2B, NAND02G-B2C
Device operations
6.6
Block erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the addressed block to `1'. All previous data in the block is lost. An erase operation consists of three steps (refer to Figure 14): 1. 2. 3. One bus cycle is required to setup the Block Erase command. Only addresses A18A28 (x8) or A17-A27 (x16) are used, the other address inputs are ignored Two or three bus cycles are then required to load the address of the block to be erased. Refer to Table 8 and Table 9 for the block addresses of each device One bus cycle is required to issue the Block Erase Confirm command to start the P/E/R controller.
The operation is initiated on the rising edge of write Enable, W, after the Confirm command is issued. The P/E/R controller handles block erase and implements the verify process. During the block erase operation, only the Read Status Register and Reset commands will be accepted, all other commands will be ignored. Once the program operation has completed the P/E/R controller bit SR6 is set to `1' and the Ready/Busy signal goes High. If the operation completed successfully, the write status bit SR0 is `0', otherwise it is set to `1'. Figure 14. Block erase operation
tBLBH3
(Erase Busy time)
RB Busy I/O 60h Block Erase Setup Code Block Address Inputs D0h Confirm Code 70h SR0
Read Status Register
ai07593
6.7
Reset
The Reset command is used to reset the command interface and status register. If the Reset command is issued during any operation, the operation will be aborted. If it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. If the device has already been reset then the new Reset command will not be accepted. The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value of tBLBH4 depends on the operation that the device was performing when the command was issued, refer to Table 25: AC characteristics for operations for the values.
29/60
Device operations
NAND01G-B2B, NAND02G-B2C
6.8
Read status register
The device contains a status register which provides information on the current or previous program or erase operation. The various bits in the status register convey information and errors on the operation. The status register is read by issuing the Read Status Register command. The status register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip Enable or Read Enable, whichever occurs last. When several memories are connected in a system, the use of Chip Enable and Read Enable signals allows the system to poll each device separately, even when the Ready/Busy pins are common-wired. It is not necessary to toggle the Chip Enable or Read Enable signals to update the contents of the status register. After the Read Status Register command has been issued, the device remains in read status register mode until another command is issued. Therefore if a Read Status Register command is issued during a random read cycle a new Read command must be issued to continue with a page read operation. The Status Register bits are summarized in Table 13: Status register bits,. Refer to Table 13 in conjunction with the following text descriptions.
6.8.1
Write protection bit (SR7)
The write protection bit can be used to identify if the device is protected or not. If the write protection bit is set to `1' the device is not protected and program or erase operations are allowed. If the write protection bit is set to `0' the device is protected and program or erase operations are not allowed.
6.8.2
P/E/R controller and cache ready/busy bit (SR6)
Status register bit SR6 has two different functions depending on the current operation. During cache program operations SR6 acts as a cache program ready/busy bit, which indicates whether the cache register is ready to accept new data. When SR6 is set to '0', the cache register is busy and when SR6 is set to '1', the cache register is ready to accept new data. During all other operations SR6 acts as a P/E/R controller bit, which indicates whether the P/E/R controller is active or inactive. When the P/E/R controller bit is set to `0', the P/E/R controller is active (device is busy); when the bit is set to `1', the P/E/R controller is inactive (device is ready).
6.8.3
P/E/R controller bit (SR5)
The program/erase/read controller bit indicates whether the P/E/R controller is active or inactive. When the P/E/R controller bit is set to `0', the P/E/R controller is active (device is busy); when the bit is set to `1', the P/E/R controller is inactive (device is ready).
30/60
NAND01G-B2B, NAND02G-B2C
Device operations
6.8.4
Cache program error bit (SR1)
The cache program error bit can be used to identify if the previous page (page N-1) has been successfully programmed or not in a cache program operation. SR1 is set to '1' when the cache program operation has failed to program the previous page (page N-1) correctly. If SR1 is set to `0' the operation has completed successfully. The cache program error bit is only valid during cache program operations, during other operations it is don't care.
6.8.5
Error bit (SR0)
The error bit is used to identify if any errors have been detected by the P/E/R controller. The error bit is set to '1' when a program or erase operation has failed to write the correct data to the memory. If the error bit is set to `0' the operation has completed successfully. The error bit SR0, in a cache program operation, indicates a failure on page N.
6.8.6
Table 13.
Bit SR7
SR4, SR3 and SR2 are reserved
Status register bits
Name Write protection '0' Program/ erase/ read controller '1' '0' '1' Cache ready/busy '0' Cache register busy (cache operation only) P/E/R C inactive, device ready P/E/R C active, device busy Program/ erase/ read controller(1) Reserved Cache program error(2) '1' '0' Don't care '1' '0' `1' Generic error `0' No Error - operation successful Page N failed in cache program operation Page N programmed successfully Page N-1 failed in cache program operation Page N-1 programmed successfully Error - operation failed Protected P/E/R C inactive, device ready P/E/R C active, device busy Cache register ready (cache operation only) Logic level '1' Not protected Definition
SR6
SR5 SR4, SR3, SR2 SR1
SR0 `1' Cache program error `0'
1. Only valid for cache program operations, for other operations it is same as SR6. 2. Only valid for cache operations, for other operations it is don't care.
31/60
Device operations
NAND01G-B2B, NAND02G-B2C
6.9
Read electronic signature
The device contains a manufacturer code and device code. To read these codes three steps are required: 1. 2. 3. One bus write cycle to issue the Read Electronic Signature command (90h) One bus write cycle to input the address (00h) Four bus read cycles to sequentially output the data (as shown in Table 14: Electronic signature). Electronic signature
byte/word 1 Part number Manufacturer code 20h NAND01GW3B2B NAND01GR4B2B 0020h NAND01GW4B2B NAND02GR3B2C 20h NAND02GW3B2C NAND02GR4B2C 0020h NAND02GW42C CAh 5Dh DAh BAh 1Dh 55h C1h 80h AAh 15h 5Dh F1h B1h 1Dh 55h byte/word 2 byte/word 3 Device code A1h (see Table 15) byte/word 4 (see Table 16) 15h
Table 14.
NAND01GR3B2B
Table 15.
I/O
Electronic signature byte 3
Definition Value 00 01 10 11 00 01 10 11 00 01 10 11 0 1 0 1 Description 1 2 4 8 2-level cell 4-level cell 8-level cell 16-level cell 1 2 4 8 Not supported supported Not supported supported
I/O1-I/O0
Internal chip number
I/O3-I/O2
Cell type
I/O5-I/O4
Number of simultaneously programmed pages
I/O6 I/O7
Interleaved programming between multiple devices Cache program
32/60
NAND01G-B2B, NAND02G-B2C Table 16.
I/O
Device operations
Electronic signature byte/word 4
Definition Value 00 01 10 11 0 1 00 01 10 11 00 01 10 11 0 1 Description 1 Kbyte 2 Kbytes Reserved Reserved 8 16 50 ns 30 ns 25 ns Reserved 64 Kbytes 128 Kbytes 256 Kbytes Reserved X8 X16
I/O1-I/O0
Page size (without spare area) Spare area size (byte / 512-byte)
I/O2
I/O7, I/O3
Minimum sequential access time
I/O5-I/O4
Block size (without spare area)
I/O6
Organization
33/60
Data protection
NAND01G-B2B, NAND02G-B2C
7
Data protection
The device has hardware features to protect against program and erase operations. It features a Write Protect, WP, pin, which can be used to protect the device against program and erase operations. It is recommended to keep WP at VIL during power-up and powerdown. In addition, to protect the memory from any involuntary program/erase operations during power-transitions, the device has an internal voltage detector which disables all functions whenever VDD is below VLKO (see Table 22 and Table 23).
34/60
NAND01G-B2B, NAND02G-B2C
Software algorithms
8
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to implement to manage the bad blocks and extend the lifetime of the NAND device. NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a high voltage. Exposing the device to a high voltage for extended periods can cause the oxide layer to be damaged. For this reason, the number of program and erase cycles is limited (see Table 18 for value) and it is recommended to implement garbage collection, a wear-leveling algorithm and an error correction code, to extend the number of program and erase cycles and increase the data retention. To help integrate a NAND memory into an application, Numonyx can provide a file system OS native reference software, which supports the basic commands of file management. Contact the nearest Numonyx sales office for more details.
8.1
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A bad block does not affect the performance of valid blocks because it is isolated from the bit line and common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased (FFh). The bad block information is written prior to shipping. Any block, where the 1st and 6th bytes, or 1st word, in the spare area of the 1st page, does not contain FFh, is a bad block. The bad block Information must be read before any erase is attempted as the bad block information may be erased. For the system to be able to recognize the bad blocks based on the original information it is recommended to create a bad block table following the flowchart shown in Figure 15.
8.2
NAND flash memory failure modes
Over the lifetime of the device additional bad blocks may develop. To implement a highly reliable system, all the possible failure modes must be considered:
Program/erase failure: in this case the block has to be replaced by copying the data to a valid block. These additional bad blocks can be identified as attempts to program or erase them will give errors in the status register As the failure of a page program operation does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data and copying the rest of the replaced block to an available valid block. The Copy Back Program command can be used to copy the data to a valid block. See Section 6.4: Copy back program for more details Read failure: in this case, ECC correction must be implemented. To efficiently use the memory space, it is recommended to recover single-bit error in read by ECC, without replacing the whole block.
Refer to Table 17 for the procedure to follow if an error occurs during an operation.
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Software algorithms Table 17. NAND flash failure modes
Operation Erase Program Read
NAND01G-B2B, NAND02G-B2C
Procedure Block replacement Block replacement or ECC ECC
Figure 15. Bad block management flowchart
START
Block Address = Block 0
Increment Block Address Update Bad Block table
Data = FFh? YES
NO
Last block? YES
NO
END
AI07588C
Figure 16. Garbage collection
Old area New area (after GC)
Valid page Invalid page Free page (erased)
AI07599B
36/60
NAND01G-B2B, NAND02G-B2C
Software algorithms
8.3
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page, and the previous page is marked as invalid. After several updates it is necessary to remove invalid pages to free some memory space. To free this memory space and allow further program operations it is recommended to implement a garbage collection algorithm. In a garbage collection software the valid pages are copied into a free area and the block containing the invalid pages is erased (see Figure 16).
8.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a wear-leveling algorithm to monitor and spread the number of write cycles per block. In memories that do not use a wear-leveling algorithm not all blocks get used at the same rate. Blocks with long-lived data do not endure as many write cycles as the blocks with frequently-changed data. The wear-leveling algorithm ensures that equal use is made of all the available write cycles for each block. There are two wear-leveling levels:

First level wear-leveling, new data is programmed to the free blocks that have had the fewest write cycles Second level wear-leveling, long-lived data is copied to another block so that the original block can be used for more frequently-changed data.
The second level wear-leveling is triggered when the difference between the maximum and the minimum number of write cycles per block reaches a specific threshold.
8.5
Error correction code
An error correction code (ECC) can be implemented in the NAND flash memories to identify and correct errors in the data. For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for line parity plus 6 bits for column parity). An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for more details.
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Software algorithms Figure 17. Error detection
NAND01G-B2B, NAND02G-B2C
New ECC generated during read
XOR previous ECC with new ECC
All results = zero? YES 22 bit data = 0
NO
>1 bit = zero? YES 11 bit data = 1
NO
1 bit data = 1
No Error
Correctable Error
ECC Error
ai08332
8.6
8.6.1
Hardware simulation models
Behavioral simulation models
Denali Software Corporation models are platform independent functional models designed to assist customers in performing entire system simulations (typical VHDL/Verilog). These models describe the logic behavior and timings of NAND flash devices, and so allow software to be developed before hardware.
8.6.2
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers and electrical characteristics of flash devices. These models provide information such as AC characteristics, rise/fall times and package mechanical data, all of which are measured or simulated at voltage and temperature ranges wider than those allowed by target specifications. IBIS models are used to simulate PCB connections and can be used to resolve compatibility issues when upgrading devices. They can be imported into SPICETOOLS.
38/60
NAND01G-B2B, NAND02G-B2C
Program and erase times and endurance cycles
9
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown in Table 18. Table 18. Program, erase times and program erase endurance cycles
NAND flash Parameters Min Page program time Block erase time Program/erase cycles per block (with ECC) Data retention 100 000 10 Typ 200 2 Max 700 3 s ms cycles years Unit
39/60
Maximum ratings
NAND01G-B2B, NAND02G-B2C
10
Maximum ratings
Stressing the device above the ratings listed in Table 19: Absolute maximum ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 19.
Symbol TBIAS TSTG VIO(1)
Absolute maximum ratings
Value Parameter Min Temperature under bias Storage temperature 1.8 V devices Input or output voltage 3 V devices 1.8 V devices Supply voltage 3 V devices - 0.6 4.6 V - 0.6 - 0.6 4.6 2.7 V V - 50 - 65 - 0.6 Max 125 150 2.7 C C V Unit
VDD
1. Minimum voltage may undershoot to -2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
40/60
NAND01G-B2B, NAND02G-B2C
DC and AC parameters
11
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow, are derived from tests performed under the measurement conditions summarized in Table 20: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 20. Operating and AC measurement conditions
NAND flash Parameter Min 1.8 V devices Supply voltage (VDD) 3 V devices Grade 1 Ambient temperature (TA) Load capacitance (CL) (1 TTL GATE and CL) Input pulses voltages 3 V devices Input and output timing ref. voltages Output circuit resistor Rref Input rise and fall times 0.4 VDD/2 8.35 5 Grade 6 1.8 V devices 3 V devices (2.7 - 3.6 V) 1.8 V devices 0 1.7 2.7 0 -40 30 50 VDD 2.4 Max 1.95 3.6 70 85 V V C C pF pF V V V k ns Units
Table 21.
Symbol CIN CI/O
Capacitance(1)
Parameter Input capacitance Input/output capacitance(2) Test condition VIN = 0 V VIL = 0 V Typ Max 10 10 Unit pF pF
1. TA = 25 C, f = 1 MHz. CIN and CI/O are not 100% tested. 2. Input/output capacitances double in stacked devices.
41/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 18. Equivalent testing circuit for AC characteristics measurement
VDD
2Rref
NAND flash
CL
2Rref
GND
GND
Ai11085
42/60
NAND01G-B2B, NAND02G-B2C Table 22.
Symbol IDD1 IDD2 IDD3 IDD5 ILI ILO VIH VIL VOH VOL IOL (RB) VLKO Operating current
DC and AC parameters
DC characteristics, 1.8 V devices
Parameter Sequential read Program Erase Standby current (CMOS)(1) Input leakage current(1) Output leakage current(1) Input high voltage Input low voltage Output high voltage level Output low voltage level Output low current (RB) VDD supply voltage (erase and program lockout) Test conditions tRLRL minimum E = VIL, IOUT = 0 mA - - E = VDD - 0.2, WP = 0/VDD VIN = 0 to VDDmax VOUT = 0 to VDDmax - - IOH = -100 A IOL = 100 A VOL = 0.1 V - Min VDD - 0.4 -0.3 VDD - 0.1 - 3 - Typ 8 8 8 10 - - - - - - 4 - 1.1 Max 15 15 15 50 10 10 VDD + 0.3 0.4 - 0.1 Unit mA mA mA A A A V V V V mA V
1. Leakage current and standby current double in stacked devices.
Table 23.
Symbol IDD1 IDD2 IDD3
IDD4
DC characteristics, 3 V devices
Parameter Sequential Read Operating current Program Erase Standby current (TTL)(1) Test conditions tRLRL minimum E = VIL, IOUT = 0 mA - - E = VIH, WP = 0/VDD E = VDD - 0.2, WP = 0/VDD VIN = 0 to VDDmax VOUT = 0 to VDDmax - - IOH = -400 A IOL = 2.1 mA VOL = 0.4 V - - - - 0.8VDD -0.3 2.4 - 8 - 10 - - - - - - 10 - 1.7 Min - - - Typ 10 10 10 Max 20 20 20 1 50 10 10 VDD + 0.3 0.2VDD - 0.4 Unit mA mA mA mA A A A V V V V mA V
IDD5 ILI ILO VIH VIL VOH VOL IOL (RB) VLKO
Standby current (CMOS)(1) Input leakage current(1) Output leakage current(1) Input high voltage Input low voltage Output high voltage level Output low voltage level Output low current (RB) VDD supply voltage (erase and program lockout)
1. Leakage current and standby current double in stacked devices.
43/60
DC and AC parameters Table 24.
Symbol tALLWH tALHWH tCLHWH tCLS tCLLWH tDVWH tELWH tWHALH tWHALL tWHCLH tCLH tWHCLL tWHDX tWHEH tWHWL tWLWH tWLWL tDH tCH tWH tWP tWC tDS tCS tALH
NAND01G-B2B, NAND02G-B2C
AC characteristics for command, address, data input
Alt. symbol tALS Parameter Address Latch Low to Write Enable High AL setup time Address Latch High to Write Enable High Command Latch High to Write Enable High CL setup time Command Latch Low to Write Enable High Data Valid to Write Enable High Chip Enable Low to Write Enable High Write Enable High to Address Latch High Write Enable High to Address Latch Low Write Enable High to Command Latch High CL hold time Write Enable High to Command Latch Low Write Enable High to Data Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Write Enable Low to Write Enable High Write Enable Low to Write Enable Low Data hold time E hold time Min Min 10 10 15 25 45 5 5 10 15 30 ns ns ns ns ns Min 10 5 ns Data setup time E setup time AL hold time AL hold time Min Min Min 10 Min 5 ns 20 35 15 20 ns ns Min 25 15 ns Min 25 15 ns 1.8 V devices 3V Unit devices
W High hold time Min W pulse width Write cycle time Min Min
44/60
NAND01G-B2B, NAND02G-B2C Table 25.
Symbol tALLRL1 tALLRL2 tBHRL tBLBH1 tBLBH2 tBLBH3 tPROG tBERS Ready/Busy Low to Ready/Busy High
DC and AC parameters
AC characteristics for operations(1)
Alt. symbol tAR tRR Parameter Address Latch Low to Read electronic signature Read Enable Low Read cycle Ready/Busy High to Read Enable Low Read busy time Program busy time Erase busy time Reset busy time, during ready Min Min Min Max Max Max Max Max Max Max Typ Max Min Min Max Max Min Min Max Min Min Min Min Max Max Max Min 1.8 V devices 10 10 20 25 700 3 5 5 10 500 3 700 10 0 30 30 100 100 45 15 10 25 50 30 25 100 60 3V devices 10 10 20 25 700 3 5 5 10 500 3 700 10 0 30 30 100 100 25 10 10 15 30 20 25 100 60 Unit ns ns ns s s ms s s s s s s ns ns ns ns ns ns ns ns ns ns ns ns s ns ns
tBLBH4
tRST
Reset busy time, during read Reset busy time, during program Reset busy time, during erase
tBLBH5 tCLLRL tDZRL tEHQZ tRHQZ tWHWH tVHWH tVLWH tELQV tRHRL tEHQX tRHQX tRLRH tRLRL tRLQV tWHBH tWHBL tWHRL
tCBSY tCLR tIR tCHZ tRHZ tADL(2) tWW(3) tCEA tREH TOH tRP tRC tREA tR tWB tWHR
Cache busy time Command Latch Low to Read Enable Low Data Hi-Z to Read Enable Low Chip Enable High to Output Hi-Z Read Enable High to Output Hi-z Last address latched to data loading time during program operations Write protection time Chip Enable Low to Output Valid Read Enable High to Read Enable Low Read Enable High hold time
Chip Enable High or Read Enable high to Output Hold Read Enable Low to Read Enable High Read Enable Low to Read Enable Low Read Enable Low to Output Valid Write Enable High to Ready/Busy High Read Enable pulse width Read cycle time Read Enable access time Read ES access time(4) Read busy time
Write Enable High to Ready/Busy Low Write Enable High to Read Enable Low
1. The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See Figure 31, Figure 32 and Figure 33. 2. tWHWH is the time from W rising edge during the final address cycle to W rising edge during the first data cycle. 3. During a program/erase enable operation, tWW is the delay from WP high to W High. During a program/erase disable Operation, tWW is the delay from WP Low to W High. 4. ES = electronic signature.
45/60
DC and AC parameters Figure 19. Command latch AC waveforms
NAND01G-B2B, NAND02G-B2C
CL tCLHWH
(CL Setup time)
tWHCLL
(CL Hold time)
tELWH
H(E Setup time)
tWHEH
(E Hold time)
E tWLWH W tALLWH
(ALSetup time)
tWHALH
(AL Hold time)
AL tDVWH
(Data Setup time)
tWHDX
(Data Hold time)
I/O
Command
ai13105
Figure 20. Address latch AC waveforms
(CL Setup time)
tCLLWH
CL tELWH
(E Setup time)
tWLWL
tWLWL
tWLWL
tWLWL
E tWLWH W tWHWL tALHWH
(AL Setup time)
tWLWH
tWLWH
tWLWH
tWLWH
tWHWL
tWHWL
tWHWL
tWHALL
(AL Hold time)
tWHALL
tWHALL
tWHALL
AL tDVWH tDVWH tWHDX
(Data Hold time)
(Data Setup time)
tDVWH tWHDX Adrress cycle 2 Adrress cycle 3
tDVWH tWHDX Adrress cycle 4
tDVWH tWHDX Adrress cycle 5
ai13106
tWHDX
I/O
Adrress cycle 1
1. A fifth address cycle is required for 2-Gbit devices only.
46/60
NAND01G-B2B, NAND02G-B2C Figure 21. Data Input Latch AC waveforms
DC and AC parameters
tWHCLH
(CL Hold time)
CL tWHEH
(E Hold time)
E
(ALSetup time)
tALLWH
tWLWL AL tWLWH W tDVWH
(Data Setup time)
tWLWH
tWLWH
tDVWH tWHDX
(Data Hold time)
tDVWH tWHDX tWHDX
I/O
Data In 0
Data In 1
Data In Last
ai13107
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
tRLRL
(Read Cycle time)
E tRHRL
(R High Holdtime)
tEHQZ
R tRHQZ tRLQV
(R Accesstime)
tRHQZ tRLQV
tRLQV
I/O tBHRL RB
Data Out
Data Out
Data Out
ai08031
1. CL = Low, AL = Low, W = High.
47/60
DC and AC parameters Figure 23. Read status register AC waveforms
tCLLRL CL tWHCLL tCLHWH E tELWH tWLWH W tWHRL R tDZRL tDVWH
(Data Setup time)
NAND01G-B2B, NAND02G-B2C
tWHEH
tELQV tEHQZ
tWHDX
(Data Hold time)
tRLQV
tRHQZ
I/O
70h
Status Register Output
ai13108
Figure 24. Read electronic signature AC waveforms
CL
E
W
AL tALLRL1
R
(Read ES Access time)
tRLQV
I/O
90h Read Electronic Signature Command
00h 1st Cycle Address
Byte1 Man. code
Byte2 Device code
Byte3 00h
Byte4 see Note.1
ai08667
1. Refer to Table 14 for the values of the manufacturer and device codes, and to Table 15 and Table 16 for the information contained in byte 3 and 4.
48/60
NAND01G-B2B, NAND02G-B2C Figure 25. Page read operation AC waveforms
DC and AC parameters
CL
E tWLWL W tWHBL AL tALLRL2 tWHBH tRLRL
(Read Cycle time)
tEHQZ
tRHQZ
R tRLRH tBLBH1 RB
I/O
00h
Add.N cycle 1
Add.N cycle 2
Add.N cycle 3
Add.N cycle 4
Add.N cycle 5
30h
Data N
Data N+1
Data N+2
Data Last
Command Code
Address N Input
Busy
Data Output from Address N to Last Byte or Word in Page
ai13109b
1. A fifth address cycle is required for 2-Gbit devices only.
49/60
DC and AC parameters Figure 26. Page program AC waveforms
NAND01G-B2B, NAND02G-B2C
CL
E tWLWL
(Write Cycle time)
tWLWL
tWLWL
W tWHWH tWHBL tBLBH2
(Program Busy time)
AL
R
I/O
80h
Add.N cycle 1
Add.N cycle 2
Add.N Add.N Add.N cycle 3 cycle 4 cycle 5
N
Last
10h
70h
SR0
RB Page Program Setup Code Confirm Code
Address Input
Data Input
Page Program Read Status Register
ai13110b
1. A fifth address cycle is required for 2-Gbit devices only.
50/60
NAND01G-B2B, NAND02G-B2C Figure 27. Block erase AC waveforms
DC and AC parameters
CL
E tWLWL
(Write Cycle time)
W tWHBL AL
(Erase Busy time)
tBLBH3
R
I/O
60h
Add. Add. Add. cycle 1 cycle 2 cycle 3
D0h
70h
SR0
RB Block Erase Setup Command Confirm Code Block Erase Read Status Register
ai08038b
Block Address Input
1. Address cycle 3 is required for 2-Gbit devices only.
Figure 28. Reset AC waveforms
W
AL CL
R I/O FFh tBLBH4
(Reset Busy time)
RB
ai08043
51/60
DC and AC parameters Figure 29. Program/erase enable waveforms
NAND01G-B2B, NAND02G-B2C
W tVHWH WP
RB
I/O
80h
10h
ai12477
Figure 30. Program/erase disable waveforms
W tVLWH WP High RB
I/O
80h
10h
ai12478
11.1
Ready/Busy signal electrical characteristics
Figure 32, Figure 31 and Figure 33 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor RP can be calculated using the following equation:
(V - ) DDmax V OLmax R P min = ------------------------------------------------------------+ IL I OL
So,
1.85V R P min ( 1.8V ) = -------------------------3mA + I L 3.2V R P min ( 3V ) = -------------------------8mA + I L
where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP max is determined by the maximum value of tr.
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NAND01G-B2B, NAND02G-B2C Figure 31. Ready/Busy AC waveform
ready VDD VOH VOL busy tf tr
DC and AC parameters
AI07564B
Figure 32. Ready/Busy load circuit
VDD
RP
ibusy
DEVICE RB Open Drain Output
VSS
AI07563B
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DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 33. Resistor value versus waveform timings for Ready/Busy signal
VDD = 1.8V, CL = 30pF 400 4 400
VDD = 3.3V, CL = 100pF 4
400
300 tr, tf (ns)
3 ibusy (mA) tr, tf (ns)
300
2.4
300
3 ibusy (mA)
ai07565B
200
1.7
2
200
200
2
120
1.2
100
30 1.7
0.85 60 1.7
90 0.57 1.7
1
0.43 1.7
100
100 3.6 3.6
0.8
1
0.6
0
0
3.6
3.6
1
2 RP (K)
3
4
1
2 RP (K)
3
4
tf
tr
ibusy
1. T = 25C.
11.2
Data protection
The Numonyx NAND device is designed to guarantee data protection during power transitions. A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold. In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept low (VIL) to guarantee hardware protection during power transitions as shown in the below figure.
Figure 34. Data protection
VDD
Nominal Range
VLKO
Locked
Locked
W
Ai11086
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NAND01G-B2B, NAND02G-B2C
Package mechanical
12
Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK(R) packages. ECOPACK(R) packages are lead-free. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
Figure 35. TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline
1 48
e
D1
B
24
25
L1 A2 A
E1 E
DIE
A1 C CP
L
TSOP-G
1. Drawing is not to scale.
Table 26.
Symbol
TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data
millimeters Typ Min Max 1.20 0.10 1.00 0.22 0.05 0.95 0.17 0.10 0.15 1.05 0.27 0.21 0.08 12.00 20.00 18.40 0.50 0.60 0.80 3 0 5 11.90 19.80 18.30 - 0.50 12.10 20.20 18.50 - 0.70 0.472 0.787 0.724 0.020 0.024 0.031 3 0 5 0.468 0.779 0.720 - 0.020 0.028 0.004 0.039 0.009 0.002 0.037 0.007 0.004 Typ inches Min Max 0.047 0.006 0.041 0.011 0.008 0.003 0.476 0.795 0.728
A A1 A2 B C CP D1 E E1 e L L1
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Package mechanical
NAND01G-B2B, NAND02G-B2C
Figure 36. VFBGA63 9.5 x 12 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
D D2 FD1 FD D1 SD
e
e E E2 E1
SE ddd
BALL "A1"
FE1 FE
e
b
A A1
A2
BGA-Z67
1. Drawing is not to scale
Table 27.
Symbol
VFBGA63 9.5 x 12 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data
millimeters Typ Min Max 1.05 0.25 0.70 0.45 9.50 4.00 7.20 0.10 12.00 5.60 8.80 0.80 2.75 1.15 3.20 1.60 0.40 0.40 - - 11.90 12.10 0.472 0.220 0.346 0.031 0.108 0.045 0.126 0.063 0.016 0.016 - - 0.468 0.40 9.40 0.50 9.60 0.018 0.374 0.157 0.283 0.004 0.476 0.016 0.370 0.010 0.028 0.020 0.378 Typ inches Min Max 0.041
A A1 A2 b D D1 D2 ddd E E1 E2 e FD FD1 FE FE1 SD SE
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NAND01G-B2B, NAND02G-B2C
Package mechanical
Figure 37. VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
D D2 FD1 D1
FE e SE ddd
E
E2
E1
b
BALL "A1"
FE1 A e SD FD A2 A1
BGA-Z75
1. Drawing is not to scale
Table 28.
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data
millimeters inches Max 1.05 0.25 0.70 0.45 9.00 4.00 7.20 0.10 11.00 5.60 8.80 0.80 2.50 0.90 2.70 1.10 0.40 0.40 - - - - - - 10.90 11.10 0.433 0.220 0.346 0.031 0.098 0.035 0.106 0.043 0.016 0.016 - - - - - - 0.429 0.40 8.90 0.50 9.10 0.018 0.354 0.157 0.283 0.004 0.437 0.016 0.350 0.010 0.028 0.020 0.358 Typ Min Max 0.041
Symbol Typ A A1 A2 b D D1 D2 ddd E E1 E2 e FD FD1 FE FE1 SD SE Min
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Ordering information
NAND01G-B2B, NAND02G-B2C
13
Ordering information
Table 29.
Example: Device type NAND flash memory Density 01G = 1 Gbit 02G = 2 Gbits Operating voltage R = VDD = 1.7 to 1.95 V W = VDD = 2.7 to 3.6 V Bus width 3 = x8 4 = x16(1) Family identifier B = 2112-byte/ 1056-word page Device options 2 = chip enable don't care enabled Product version B = second version (1-Gbit devices) C = third version (2-Gbit devices) Package N = TSOP48 12 x 20 mm ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch(2) ZA= VFBGA63 9 x 11 x 1 mm, 0.8 mm pitch(3) Temperature range 1 = 0 to 70 C 6 = -40 to 85 C Option E = ECOPACK(R) package, standard packing F = ECOPACK(R) package, tape & reel packing
1. x16 organization only available for MCP products. 2. For NAND02G-B2C devices only. 3. For NAND01G-B2B devices only.
Ordering information scheme
NAND02GR3B2C ZA 6 E
Note:
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to '1'. For further information on any aspect of this device, please contact your nearest Numonyx sales office.
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NAND01G-B2B, NAND02G-B2C
Revision history
14
Revision history
Table 30.
Date 18-May-2006 01-Jun-2006 09-Jun-2006
Document revision history
Version 0.1 1 2 Initial release. Document status changed to preliminary data. VFBGA63 9 x 11 x 1 mm package added for NAND01G-B2B devices and VFBGA63 9.5 x 12 x 1 mm dedicated to NAND02G-B2C devices. Note 2 below Commands removed. Overview of Section 6.1: Read memory array updated. Paragraph concerning Exit Cache Read command updated in Section 6.2: Cache read. Block replacement section replaced by Section 8.2: NAND flash memory failure modes. tWHALL added in Table 24: AC characteristics for command, address, data input. RB waveform updated in Figure 25: Page read operation AC waveforms, and CL waveform modified in Figure 26: Page program AC waveforms. An error correction code (ECC) is required to obtain a data integrity of 100 000 program/erase cycles per block. Section 3.9: Ready/Busy (RB) modified. tRHRL2 timing removed from Figure 9: Page program operation and Table 25: AC characteristics for operations. Note removed below Figure 11: Copy back program. tWHBH2 replaced by tBLBH5, cash busy time, in Section 6.5: Cache program. Alt. symbol for tBLBH4 is tRST in Table 25: AC characteristics for operations. Applied Numonyx branding. Changes
23-Nov-2006
3
20-Apr-2007
4
14-Apr-2008
5
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NAND01G-B2B, NAND02G-B2C
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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx, B.V., All Rights Reserved.
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